Power modules with additional low inductive current path
寄生电感与战俘的一个主要问题er modules, in particular in fast switching applications.
寄生电感与战俘的一个主要问题er modules, in particular in fast switching applications. The parasitic inductance of the component interconnections causes an overvoltage condition and increases the switch-off losses in the semiconductor. Many initiatives have been investigated to reduce the parasitic inductance in power modules utilizing a complex mechanical construction of overlapping internal bus bars forming the dc path.
The first results of the new idea to separate the current paths into a static low resistive screw contact and in a transient low inductive PCB-based connection are promising. The limit for reduction of stray inductance is not yet reached. The new solution is a new milestone for low inductive high power module technology. The 2nH target turns from an imaginary target into a realistic one and it opens the field for new fast high power module topologies.
Vincotech’s article about “Power Modules with Additional Low Inductive Current Path” outlines a concept using today’s standard power module construction but providing an additional ultra low inductive path for the transient current.
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